Simpson, P. J., et al. “On the Electrical Deactivation of Arsenic in Silicon”. Journal of Vacuum Science & Technology B, vol. 15, no. 3, 1997, pp. 757-9, https://scholar2.islandarchives.ca/islandora/object/ir%3Air-batch6-1696.

Genre

  • Journal Article
Contributors
Author: Simpson, P. J.
Author: Lawther, Derek W.
Author: Myler, U.
Author: Rousseau, P. M.
Date Issued
1997
Abstract

Previous work on thermally induced arsenic deactivation in highly doped silicon has proven the generation bf vacancies and suggests the formation of arsenic-vacancy clusters as the deactivation mechanism. Using positron annihilation spectroscopy in the two-detector coincidence geometry, we are able to show that the thermally generated vacancies are indeed surrounded by arsenic atoms. (C) 1997 American Vacuum Society.

Note

UNIV PRINCE EDWARD ISL,DEPT PHYS,CHARLOTTETOWN,PE C1A 4P3,CANADA. STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305.; Myler, U, UNIV WESTERN ONTARIO,DEPT PHYS & ASTRON,LONDON,ON N6A 3K7,CANADA.

WOODBURY; CIRCULATION FULFILLMENT DIV, 500 SUNNYSIDE BLVD, WOODBURY, NY 11797-2999

AMER INST PHYSICS

PT: J; CR: ALATALO M, 1995, PHYS REV B, V51, P4176 ASOKAKUMAR P, IN PRESS APPL SURF S CHU WK, 1980, LASER SOLID INTERACT, P253 LAWTHER DW, 1995, APPL PHYS LETT, V67, P3575 LYNN KG, 1976, SOLID STATE COMMUN, V18, P1549 MYLER U, 1996, APPL PHYS LETT, V69, P3333 PANDEY KC, 1988, PHYS REV LETT, V61, P1282 ROUSSEAU PM, 1995, APPL PHYS LETT, V65, P578 SCHULTZ PJ, 1988, NUCL INSTRUM METH B, V30, P94 SCHULTZ PJ, 1988, REV MOD PHYS, V60, P701; NR: 10; TC: 8; J9: J VAC SCI TECHNOL B; PG: 3; GA: XF134

Source type: Electronic(1)

Language

  • English

Subjects

  • Physics, Applied
  • Engineering, Electrical & Electronic
  • Nanoscience & Nanotechnology
Page range
757-759
Host Title
Journal of Vacuum Science & Technology B
Host Abbreviated Title
J.Vac.Sci.Technol.B
Volume
15
Issue
3
ISSN
0734-211X

Department