Weaver, L., et al. “Variable-Energy Positron Beam Study of Arsenic Diffusion in Poly-Silicon”. Applied Surface Science, vol. 85, no. 1-4, 1995, pp. 265-70, https://doi.org/10.1016/0169-4332(94)00341-6.

Genre

  • Journal Article
Contributors
Author: Weaver, L.
Author: Lawther, Derek W.
Author: Schultz, P. J.
Author: Khatri, R.
Author: Simpson, P. J.
Author: Calder, I.
Date Issued
1995
Abstract

The positron beam technique is shown to be a sensitive indicator of the presence of arsenic within the grain boundaries of poly-silicon. Variable-energy positron beam and secondary-ion mass spectrometry studies have been performed on As+-implanted pre-amorphized Si samples as a function of dose and rapid thermal anneal temperature. Positron trapping within negatively-charged grain boundaries of the recrystallized poly-Si is observed, resulting in a similar to 2% elevation in the Doppler-broadening S lineshape parameter value. Infusion of As+-ions into the grain boundaries passivates the charge and reduces their specific positron-trapping rate.

Note

NO TELECOM ELECT LTD,NEPEAN,ON K2H 8V4,CANADA.; LAWTHER, DW, UNIV WESTERN ONTARIO,DEPT PHYS,LONDON,ON N6A 3K7,CANADA.

AMSTERDAM; PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS

ELSEVIER SCIENCE BV

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Source type: Electronic(1)

Language

  • English

Subjects

  • Physics, Applied
  • INSULATOR
  • implantation
  • Materials Science, Coatings & Films
  • oxygen
  • Chemistry, Physical
  • DEFECT FORMATION
  • Physics, Condensed Matter
  • CRYSTALLINE SI
  • ANNIHILATION
Page range
265-270
Host Title
Applied Surface Science
Host Abbreviated Title
Appl.Surf.Sci.
Volume
85
Issue
1-4
ISSN
0169-4332
DOI
https://doi.org/10.1016/0169-4332(94)00341-6

Department