Asquith, J., et al. “A Two-Dimensional Numerical Model of a Floating-Gate EEPROM Transistor”. International Journal of Electronics, vol. 85, no. 6, 1998, pp. 697-12, https://doi.org/10.1080/002072198133752.

Genre

  • Journal Article
Contributors
Author: Asquith, J.
Author: Sung, C. L.
Author: Ho, F. D.
Author: Chan, Catherine B.
Date Issued
1998
Note

PT: J

Source type: Electronic(1)

Language

  • English
Page range
697-712
Host Title
International Journal of Electronics
Volume
85
Issue
6
ISSN
0020-7217
DOI
https://doi.org/10.1080/002072198133752

Department